Three-dimensional charge coupled device

Details Three-dimensional charge coupled device Three-dimensional charge coupled device

1996-04-26

1999-11-09

Ngoo, Ngaan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257223, 257230, H01L 27148, H01L 29768

Patent

active

059819880

ABSTRACT:
A monolithic three dimensional charged coupled device (3D-CCD) which utilizes the entire bulk of the semiconductor for charge generation, storage, and transfer. The 3D-CCD provides a vast improvement of current CCD architectures that use only the surface of the semiconductor substrate. The 3D-CCD is capable of developing a strong E-field throughout the depth of the semiconductor by using deep (buried) parallel (bulk) electrodes in the substrate material. Using backside illumination, the 3D-CCD architecture enables a single device to image photon energies from the visible, to the ultra-violet and soft x-ray, and out to higher energy x-rays of 30 keV and beyond. The buried or bulk electrodes are electrically connected to the surface electrodes, and an E-field parallel to the surface is established with the pixel in which the bulk electrodes are located. This E-field attracts charge to the bulk electrodes independent of depth and confines it within the pixel in which it is generated. Charge diffusion is greatly reduced because the E-field is strong due to the proximity of the bulk electrodes.

REFERENCES:
patent: 4760273 (1988-07-01), Kimata
patent: 4878102 (1989-10-01), Bakker et al.
patent: 5029321 (1991-07-01), Kimura
patent: 5555520 (1996-09-01), Sudo et al.
"Thinned, Back Illuminated CCDs for Short Wavelength Applications," Tektronix Tech. Note, Jul. 1991.
I. T. Flint, "CCD-X-ray Detection," EEV Tech Note, Nov. 1991.
M. H. White, "Charge Transport Without Traps, " Solid State Imaging, Proceedings of the NATO Advanced Study Institute on Solid State Imaging, pp. Sep. 1975.

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