Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-07-11
1993-01-12
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
35821323, 257292, H01L 2978, H01L 2714, H01L 3100
Patent
active
051794284
ABSTRACT:
A three-dimensional CCD image sensor comprising a plurality of N type light receiving regions being formed on a two-dimensional plane; a plurality of N type VCCD regions being formed under said plurality of N type light receiving regions; a series of arrangement that said plurality of N type light receiving regions and said plurality of N type VCCD regions are formed opposite to each other being configured in sequence at a desired interval; a desired area of a charge transfer path being formed between each of said plurality of N type light receiving regions and each of said plurality of N type VCCD regions; and a P.sup.+ type charge transfer barrier being formed to a predetermined thickness at the remaining portion except where said charge transfer path is to be formed, between each of said plurality of N type light receiving regions and each of said plurality of N type VCCD regions. In accordance with the present invention, only a plurality of N type light receiving regions for receiving light are arranged at a desired interval on the two-dimensional plane. Also, a plurality of N type VCCD regions as light transmitting regions are formed three-dimensionally under the N type light receiving regions. Therefore, the fill factor of the light receiving region can be enhanced significantly.
REFERENCES:
patent: 4450464 (1984-05-01), Yamada
Gold Star Electron Co. Ltd.
Hille Rolf
Limanek Robert
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