Three-dimensional cavity surface emitting laser structure and fa

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation

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438 29, 372 96, H01L 2120

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active

058952241

ABSTRACT:
A three-dimensional cavity surface emitting laser structure and a fabrication method thereof which are capable of effectively controlling the characteristic of the transverse mode by applying independent electrical field to a side wall of an active region and concentrating a current flow along, inside of the active region. The structure includes a protrusion portion of a bottom mirror region formed on a substrate, an insulation film formed in a sidewall of a laser post having an active region extended from the protrusion and a top mirror region, and a sidewall metal mirror layer electrically separated from n-type and p-type electrodes for independently applying an electric field.

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patent: 5658824 (1997-08-01), Itoh et al.
patent: 5661076 (1997-08-01), Yoo et al.
patent: 5675605 (1997-10-01), Fujii

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