Three-dimensional array of re-programmable non-volatile...

Details Three-dimensional array of re-programmable non-volatile... Three-dimensional array of re-programmable non-volatile...

2011-07-19

2011-07-19

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Format or disposition of elements

C365S130000, C365S135000, C365S154000, C365S180000, C365S182000

Reexamination Certificate

active

07983065

ABSTRACT:
A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.

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