Third order room temperature nonlinear optical switches

Details Third order room temperature nonlinear optical switches Third order room temperature nonlinear optical switches

1994-03-04

1995-04-11

Lee, John D.

Optical: systems and elements

Optical frequency converter

2525011, 252582, 359241, 359321, G02F 135

Patent

active

054064074

ABSTRACT:
An optical switching device comprises a material which exhibits third order optical nonlinearity (X.sup.(3)) at frequencies just below the band gap of the material, a room temperature and at a wavelength of approximately 1.55.mu.. The switching device is particularly useful for optical communication applications. The preferred material is n-Al.sub.x Ga.sub.1-x Sb, where x is approximately 0.1. Additional preferred materials are those which have a band gap (at .GAMMA.) just above the photon energy of the system and have a subsidiary conduction band (at X or L) approximately 0.1 ev above the E.sub.o level at .GAMMA. at a predetermined wavelength. Such alloy systems include (AlGaIn)As with 0.635.mu..ltoreq..lambda..ltoreq.0.672.mu., and (AlGaIn)P with 0.56.mu..ltoreq..lambda..ltoreq.0.65.mu..

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Kathleen Kash et al, "Nonlinear optical studies of picosecond relaxation times of electrons in n-GaAs and n-GaSb", Appl. Phys. Lett. 42(2), Jan. 15, 1983 pp. 173-175.
P. A. Wolff et al, "Novel, free-carrier-induced optical non-linearities of narrow-gap semiconductors", Semicond. Sci. Technol. 5 (1990), pp. S57-S67 (no month).
C. Alibert et al, "Modulation-spectroscopy study of the Ga.sub.1-x Al.sub.x Sb band structure", Physical Review B, vol. 27, No. 8, Apr. 15, 1983, pp. 4946-4954.

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