Thinned image sensor with trench-insulated contact terminals

Details Thinned image sensor with trench-insulated contact terminals Thinned image sensor with trench-insulated contact terminals

2011-08-16

2011-08-16

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S065000, C438S069000, C438S098000, C257S290000, C257S444000, C257SE31110, C257SE31103

Reexamination Certificate

active

07998780

ABSTRACT:
The invention relates to the fabrication of thinned substrate image sensors, and notably color image sensors. After the fabrication steps carried out from the front face of a silicon substrate the front face is transferred onto a substrate. The silicon is thinned, and the connection terminals are produced by the rear face. A multiplicity of localized contact holes are opened through the thinning silicon, in the location of a connection terminal. The holes exposing a first conductive layer (24) are formed during the front face steps. Aluminum (42) is deposited on the rear face, in contact with the silicon, with the aluminum penetrating into the openings and coming into contact with the first layer. The aluminum is etched to delimit the connection terminal. Finally, a peripheral trench is opened through the entire thickness of the silicon layer, and this trench completely surrounds the connection terminal.

REFERENCES:
patent: 2005/0104148 (2005-05-01), Yamamoto et al.
patent: 1693902 (2006-08-01), None
patent: 2005167090 (2005-06-01), None

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