Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-06-23
2000-06-06
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257232, 257233, 257447, 257448, 438 59, 438 60, H01L 27148, H01L 29768
Patent
active
060722045
ABSTRACT:
An integrated circuit device structure comprises a semiconductor plateau containing an active region subjacent its front side, an electrode structure at the front side of the plateau, and an insulating layer surrounding the semiconductor plateau. A front side bus at the front side of the insulating layer is connected to the electrode structure. The front side bus extends over an elongate aperture in the insulating layer and is connected through the aperture to a back side bus over substantially the entire length of the front side bus.
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patent: 4946716 (1990-08-01), Corrie
patent: 5255099 (1993-10-01), Orihara
patent: 5393997 (1995-02-01), Fukusho et al.
patent: 5631702 (1997-05-01), Miwada
patent: 5661317 (1997-08-01), Jeong
patent: 5716867 (1998-02-01), Kim
Blouke Morley M.
Dosluoglu Taner
Mintel William
Scientific Imaging Technologies, Inc.
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