Thin wafer detectors with improved radiation damage and...

Details Thin wafer detectors with improved radiation damage and... Thin wafer detectors with improved radiation damage and...

2007-07-10

2007-07-10

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S414000, C257S428000, C257S431000, C257SE31001, C438S048000, C438S057000, C438S064000, C438S066000

Reexamination Certificate

active

10838987

ABSTRACT:
The present invention provides for reduced radiation damage susceptibility, decreased affects of crosstalk, and increased flexibility in application. In one embodiment, the present invention includes a back side illuminated photodiode array with a back side etching that minimizes the active area layer, thereby decreasing the affects of crosstalk. The back side etching is preferably, but by no way of limitation, in the form of “U” or “V” shaped grooves. The back side illuminated with back side etching (BSL-BE) photodiodes are implemented in an array and have superior performance characteristics, including less radiation damage due to a thinner active area, and less crosstalk due to shorter distances for minority carriers to diffuse to the PN junction.

REFERENCES:
patent: 4874939 (1989-10-01), Nishimoto et al.
patent: 4887140 (1989-12-01), Wang
patent: 4904608 (1990-02-01), Gentner et al.
patent: 4904861 (1990-02-01), Epstein et al.
patent: 4998013 (1991-03-01), Epstein et al.
patent: 5144379 (1992-09-01), Eshita et al.
patent: 5214276 (1993-05-01), Himoto et al.
patent: 5237197 (1993-08-01), Snoeys et al.
patent: 5252142 (1993-10-01), Matsuyama et al.
patent: 5408122 (1995-04-01), Reele
patent: 5430321 (1995-07-01), Effelsberg
patent: 5446751 (1995-08-01), Wake
patent: 5576559 (1996-11-01), Davis
patent: 5599389 (1997-02-01), Iwasaki
patent: 5818096 (1998-10-01), Ishibashi et al.
patent: 5825047 (1998-10-01), Ajisawa et al.
patent: 5869834 (1999-02-01), Wipenmyr
patent: 5923720 (1999-07-01), Barton et al.
patent: 6027956 (2000-02-01), Irissou
patent: 6218684 (2001-04-01), Kuhara et al.
patent: 6326649 (2001-12-01), Chang et al.
patent: 6352517 (2002-03-01), Flock et al.
patent: 6426991 (2002-07-01), Mattson et al.
patent: 6438296 (2002-08-01), Kongable
patent: 6489635 (2002-12-01), Sugg
patent: 6504158 (2003-01-01), Possin
patent: 6510195 (2003-01-01), Chappo et al.
patent: 6546171 (2003-04-01), Fukutomi
patent: 6569700 (2003-05-01), Yang
patent: 6670258 (2003-12-01), Carlson et al.
patent: 6734416 (2004-05-01), Carlson et al.
patent: 2002/0056845 (2002-05-01), Iguchi et al.
patent: 2004/0104351 (2004-06-01), Shibayama
patent: 0 347 157 (1989-12-01), None
patent: 0 723 301 (1997-05-01), None
patent: 0 723 301 (2000-07-01), None
patent: 1 069 626 (2001-01-01), None
patent: 1 205 983 (2002-05-01), None
patent: WO00/52766 (2000-09-01), None

Affiliated with

Also associated with

Rating

Thin wafer detectors with improved radiation damage and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin wafer detectors with improved radiation damage and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin wafer detectors with improved radiation damage and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3728608