Thin type semiconductor device, module structure using the devic

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead

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257676, H01L 2348

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active

058959696

ABSTRACT:
Ends of inner leads are disposed in the vicinity of a peripheral end of a semiconductor chip and a portion of an insulating film tape is affixed to a main surface of the semiconductor chip by an adhesive while other portions of the insulating film tape are affixed to portions of the inner leads by an adhesive. Electrode pads provided in the main surface of the semiconductor chip are electrically connected to the ends of the corresponding inner leads by bonding wires, and the semiconductor chip, the inner leads, the electrode pads, the insulating film tape and the bonding wires are sealed by a resin molding. The thickness of the insulating film tape is smaller than a height from the main surface of the semiconductor chip to an apex of the bonding wire. Surfaces of the ends of the inner leads connected to the bonding wires are positioned lower than the main surface of the semiconductor chip and the inner leads are positioned between the main surface and an opposite surface of the semiconductor chip.

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"DRAM TSOP", in Gain 83, Hitachi, Ltd., Nov. 1990, pp. 30-31 (Translation or concise explanation of relevant portions on currently available).
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