Semiconductor device manufacturing: process – Making regenerative-type switching device – Having structure increasing breakdown voltage
Reexamination Certificate
2007-05-22
2009-10-06
Nguyen, Tu T (Department: 4126)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having structure increasing breakdown voltage
Reexamination Certificate
active
07598128
ABSTRACT:
A method is provided for fabricating a silicon (Si)-on-insulator (SOI) double-diffused metal oxide semiconductor transistor (DMOST) with a stepped channel thickness. The method provides a SOI substrate with a Si top layer having a surface. A thinned area of the Si top layer is formed, and a source region is formed in the thinned Si top layer area. The drain region is formed in an un-thinned area of the Si top layer. The channel has a first thickness adjacent the source region with first-type dopant, and a second thickness, greater than the first thickness, adjacent the drain region. The channel also has a sloped thickness between the first and second thicknesses. The second and sloped thicknesses have a second-type dopant, opposite of the first-type dopant. A stepped gate overlies the channel.
REFERENCES:
patent: 5780900 (1998-07-01), Suzuki et al.
patent: 2002/0109184 (2002-08-01), Hower et al.
patent: 2004/0155284 (2004-08-01), Kim
A-BCD Technology, Philip Semiconductors Advanced Bipolar-CMOS-DMOS Smart Power Process Technology.
N. Nenadovic, et al, “RF Power Silicon-On-Glass VDMOSFETs” IEEE EDL25, #6 p. 424, 2004.
M. Wasekura et al, “An SOI-BiCDMOS Chipset for Automotive Electronically Controlled Brake System” 2006 IEEE SOI International OSI conference Proceeding, Paper 7.1.
Hsu Sheng Teng
Lee Jong-Jan
Chin Ker-Ming
Law Office of Gerald Maliszewski
Maliszewski Gerald
Nguyen Tu T
Sharp Laboratories of America Inc.
LandOfFree
Thin silicon-on-insulator double-diffused metal oxide... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin silicon-on-insulator double-diffused metal oxide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin silicon-on-insulator double-diffused metal oxide... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4109735