Thin silicon-on-insulator double-diffused metal oxide...

Semiconductor device manufacturing: process – Making regenerative-type switching device – Having structure increasing breakdown voltage

Reexamination Certificate

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Reexamination Certificate

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07598128

ABSTRACT:
A method is provided for fabricating a silicon (Si)-on-insulator (SOI) double-diffused metal oxide semiconductor transistor (DMOST) with a stepped channel thickness. The method provides a SOI substrate with a Si top layer having a surface. A thinned area of the Si top layer is formed, and a source region is formed in the thinned Si top layer area. The drain region is formed in an un-thinned area of the Si top layer. The channel has a first thickness adjacent the source region with first-type dopant, and a second thickness, greater than the first thickness, adjacent the drain region. The channel also has a sloped thickness between the first and second thicknesses. The second and sloped thicknesses have a second-type dopant, opposite of the first-type dopant. A stepped gate overlies the channel.

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patent: 2004/0155284 (2004-08-01), Kim
A-BCD Technology, Philip Semiconductors Advanced Bipolar-CMOS-DMOS Smart Power Process Technology.
N. Nenadovic, et al, “RF Power Silicon-On-Glass VDMOSFETs” IEEE EDL25, #6 p. 424, 2004.
M. Wasekura et al, “An SOI-BiCDMOS Chipset for Automotive Electronically Controlled Brake System” 2006 IEEE SOI International OSI conference Proceeding, Paper 7.1.

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