Thin silicon film electronic device

Details Thin silicon film electronic device Thin silicon film electronic device

1977-07-27

1979-12-25

Esposito, Michael F.

Stock material or miscellaneous articles

Composite

Of quartz or glass

428446, 136 89SG, 427 74, 427 85, 427255, 106 52, 148174, 148175, B32B 1706, B05D 512

Patent

active

041806182

ABSTRACT:
The present invention is related to the fabrication of electronic devices wherein a thin film of silicon is deposited upon a substrate. More particularly, the invention is directed to such devices wherein the substrate therefor is an alkaline earth metal aluminosilicate glass consisting essentially, by weight, of about 55-75% SiO.sub.2, 5-25% Al.sub.2 O.sub.3, and at least one alkaline earth metal oxide selected from the group consisting of 9-15% CaO, 14-20% SrO, 18-26% BaO, and mixtures thereof in a total amount equivalent on a molar basis to 9-15% CaO.

REFERENCES:
patent: 3414434 (1968-12-01), Manasevit
patent: 3484311 (1969-12-01), Benzing
patent: 3508962 (1970-04-01), Manasevit et al.
patent: 3564358 (1971-02-01), Hahnlein
patent: 3990914 (1976-11-01), Weinstein
patent: 4012263 (1977-03-01), Shell
patent: 4060423 (1977-11-01), Thomas
Tung, Deposition & Physical Properties of Aluminosilicate Films, _J. Electrochem. Soc., Solid State Science, vol. 117, No. 1 (Pp. 91-94)(1-1970).

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