Thin silicon devices

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1977-06-24

1979-01-02

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

79590, 156628, 156647, 156649, 156657, 156662, B01J 1700

Patent

active

041319850

ABSTRACT:
This relates to a semiconductor device and method for making same. At least one semiconductor device is formed in a polished silicon slice, and the device is framed by a deep diffusion of boron. The surface of the slice is then coated with a layer of silicon nitride, and a glass ceramic body is bonded to the silicon nitride layer. The device is next isolated by isotropic etching, and the silicon from beneath the device is removed with a selective etch so that metal interconnections can be made to the underside of the device.

REFERENCES:
patent: 3571919 (1971-03-01), Gleim
patent: 3590479 (1971-07-01), Devries
patent: 4070230 (1978-01-01), Stein

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