Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1992-02-03
1994-08-23
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257613, 257623, 257627, H01L 310312, H01L, H01L, H01L, H01L, H01L, H01L
Patent
active
053410009
ABSTRACT:
A present invention is intended to provide a semiconductor device having a structure in which devices are formed in a thin layer (18) of silicon carbide having reduced crystal faults on a silicon substrate (2). A silicon dioxide layer (4) is formed on the semiconductor substrate (2) (FIG. 2A). The silicon dioxide layer (4) is then provided with openings (14) (FIG. 2D). Silicon carbide is grown from the openings until it covers the insulating layer to thereby form a silicon carbide crystal layer (16) (FIG. 3A). The silicon carbide crystal layer (16) is then covered by a SOG layer 20 over the whole surface and subjected to anisotropic etching, whereby a thin layer of silicon carbide is left on the substrate (2) (FIG. 3C). Semiconductor circuit devices are formed in this thin layer (18). Since the layer (18) is grown laterally and has almost uniform plane orientation, it can provide a semiconductor device formed therein with superior electrical characteristics.
REFERENCES:
patent: 4874718 (1989-10-01), Inoue
patent: 4983538 (1991-01-01), Gotou
patent: 4997787 (1991-03-01), Eshita
Loke Steven
Mintel William
Rohm & Co., Ltd.
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