Thin silicon based substrate

Details Thin silicon based substrate Thin silicon based substrate

2006-03-23

2008-10-28

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257S621000, C257SE23063, C257SE23067, C438S618000, C438S624000

Reexamination Certificate

active

07443030

ABSTRACT:
Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.

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