Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2007-03-06
2007-03-06
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
active
10519560
ABSTRACT:
In order to obtain a thin plate manufacturing method capable of extremely increasing manufacturing efficiency by enlarging the production scale and remarkably reducing the manufacturing cost per unit area and an apparatus for manufacturing this thin plate, a method and an apparatus performing introduction of a substrate into a main chamber and discharge of the substrate from the main chamber through at least one subsidiary chamber adjacent to the main chamber are employed when manufacturing a silicon thin plate by dipping a surface layer part of the substrate into a silicon melt in a crucible arranged in the main chamber for bonding silicon to the surface of the substrate.
REFERENCES:
patent: 6596075 (2003-07-01), Igarashi et al.
patent: 6682990 (2004-01-01), Iwane et al.
patent: 6709555 (2004-03-01), Ogure et al.
patent: 6802900 (2004-10-01), Iwane et al.
patent: 6871773 (2005-03-01), Fukunaga et al.
patent: 2004/0053433 (2004-03-01), Goma et al.
patent: 2004/0238024 (2004-12-01), Goma et al.
patent: 102 97 102 (2004-09-01), None
patent: 1 113 096 (2001-07-01), None
patent: 61-275119 (1986-12-01), None
patent: 62-79616 (1987-04-01), None
patent: 63-102766 (1988-07-01), None
patent: 6-64913 (1994-03-01), None
patent: 6-252072 (1994-09-01), None
patent: 9-110591 (1997-04-01), None
patent: 10-29895 (1998-02-01), None
patent: 2002-193608 (2002-07-01), None
patent: 2002-289544 (2002-10-01), None
patent: 2003-59849 (2003-02-01), None
patent: 02/20882 (2002-03-01), None
patent: 02/24982 (2002-03-01), None
Translation of the International Preliminary Examination Report mailed Dec. 9, 2004 in corresponding PCT Application No. PCT/JP2003/008012.
German Office Action and English translation thereof mailed Jan. 31, 2006 in corresponding German application 103 92 847.2-43.
Gokaku Hirozumi
Goma Shuji
Nagai Toshiaki
Nakai Yasuhiro
Tadokoro Masahiro
Le Thao P.
Sharp Kabushiki Kaisha
Shinko Electric Co. Ltd.
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