Measuring and testing – Gas analysis – Detector detail
Reexamination Certificate
2004-04-23
2008-10-28
Williams, Hezron E. (Department: 2856)
Measuring and testing
Gas analysis
Detector detail
Reexamination Certificate
active
07441440
ABSTRACT:
The gas sensor device of the semiconductor film type comprises, on a single face of it, at least one gas sensor, a resistive heating film and pads for electrical contact of the sensors and of the resistive heating film; the heating element, the gas sensor film and the contact pads are made entirely by sputter deposition.
REFERENCES:
patent: 3503030 (1970-03-01), Matsumoto et al.
patent: 4169369 (1979-10-01), Chang
patent: 4338281 (1982-07-01), Treitinger et al.
patent: 4389373 (1983-06-01), Linder et al.
patent: 4399424 (1983-08-01), Rigby
patent: 4453151 (1984-06-01), Leary et al.
patent: 4457161 (1984-07-01), Iwanaga et al.
patent: 4580439 (1986-04-01), Manaka
patent: 4673910 (1987-06-01), Uchikawa et al.
patent: 4740387 (1988-04-01), Manaka
patent: 4816800 (1989-03-01), Onaga et al.
patent: 4885929 (1989-12-01), Kasahara et al.
patent: 4911892 (1990-03-01), Grace et al.
patent: 4938928 (1990-07-01), Koda et al.
patent: 4977658 (1990-12-01), Awano et al.
patent: 4984446 (1991-01-01), Yagawara et al.
patent: 4991424 (1991-02-01), Lehto
patent: 5003812 (1991-04-01), Yagawara et al.
patent: 5012671 (1991-05-01), Yagawara et al.
patent: 5019885 (1991-05-01), Yagawara et al.
patent: 5367283 (1994-11-01), Lauf et al.
patent: 5457333 (1995-10-01), Fukui
patent: 5759367 (1998-06-01), Matsuura et al.
patent: 5783153 (1998-07-01), Logothetis et al.
patent: 5837886 (1998-11-01), Nakahara et al.
patent: 5918261 (1999-06-01), Williams et al.
patent: 6012327 (2000-01-01), Seth et al.
patent: 6109095 (2000-08-01), Addiego
patent: 6786076 (2004-09-01), Raisanen
patent: 2003/0230749 (2003-12-01), Isobe et al.
patent: 2003/0233864 (2003-12-01), Rodier
patent: 63231254 (1988-09-01), None
Sberveglieri et al, “Highly Sensitive and Selective NOxand NO2Sensor Based on Cd-doped SnO2Thin Films,” Sensors and Actuators B. 4, 1991, pp. 457-461.
Sberveglieri et al, “A new technique for the preparation of highly sensitive hydrogen sensors based on SnO2(Bi2O3) thin films,” Sensors and Actuators B, 5, 1991, pp. 253-255.
Sberveglieri et al, “A new technique for growing porous SnO2(Bi2O3) thin films as bydrogen gas sensors,” Journal of Materials Science Letters 10, 1991, pp. 602-604.
Sberveglieri et al, “A novel PVD technique for the preparation of SnO2thin films as C2H5OH Sensors,” Sensors and Actuators B, 7, 1992, pp. 721-726.
Sberveglieri et al, “R.G.T.O: A New Technique for Preparing SnO2Sputtered Thin Film as Gas Sensors.” IEEE, vol. 5, 1991, pp. 165-168.
Sberveglieri, “Classical and novel techniques for the preparation of SnO2thin-film gas sensors”, Sensors and Actuators B, 6, 1992, pp. 239-247.
Sberveglieri et al, “Detection of Sub-ppm H2S concentrations by means of SnO2(Pt) thin films, grown by the RGTO technique”, Sensors and Actuators B, 15-16, 1993, pp. 86-89.
Sberveglieri,“Novel Trends in the development of semiconducting thin films for gas sensing”, Books of Abstracts, International Workshop on New Developments in Semiconducting Gas Sensors, Sep. 13-14, 1993.
Sberveglieri et al, “WO3 sputtered thin films for NOx monitoring”, Abstract Eurosensors VIII, Sep. 25-28, 1994.
Sberveglieri, “Recent developments in semiconducting thin-film gas sensors”, Sensors and Actuators B, 23, 1995, p. 103-109.
Sberveglieri et al, “A Novel Method for the Preparation of Nanosized TiO2Thin Films” Advanced Materials, 1996, vol. 8, No. 4, pp. 334-337.
Ferroni et al, “Gas-Sensing Applications of W-Ti-O-based nanosized thin films prepared by r.f. reactive sputtering”, Sensors and Actuators B, 44, 1997, pp. 499-502.
Faglia et al, “Electrical and structural properties of RGTO-In2O3sensors for ozone”, Sensors and Actuators B 57, 1997, pp. 188-191.
Comini et al, “Carbon monoxide response of molybdenum oxide thin films deposited by different techniques”, Sensors and Actuators B 68, 2000, pp. 168-174.
Comini et al, “Ti-W-O sputtered thin film as n- or p-type gas sensors”, Sensors and Actuators B 70, 2000, pp. 108-114.
Comini et al, “Production and characterization of titanium and iron oxide nano-sized thin films”, J. Mater. Res., vol. 16, No. 6, Jun. 2001, pp. 1559-1564.
Baratto Camilla
Comini Elisabetta
Faglia Guido
Falasconi Matteo
Sberveglieri Giorgio
Fitzgerald John
Sacmi Cooperativa Meccanici Imola Soc. Coop. a.r.l.
Squire Sanders & Dempsey L.L.P.
Williams Hezron E.
LandOfFree
Thin semiconductor film gas sensor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin semiconductor film gas sensor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin semiconductor film gas sensor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3989539