1985-04-10
1987-07-21
Edlow, Martin H.
357 4, 357 20, H01L 2904
Patent
active
046822062
ABSTRACT:
A novel thin ribbon of semiconductor has a polycrystalline structure composed more than 50% of grains having a grain size of more than 5 .mu.m, a thickness of 5 to 200 .mu.m, a sufficient flexibility to be windable on a pipe having a diameter of 34 mm, and malleability. The semiconductor is composed of p-type, i-type or n-type semiconductor material, and may be a two-layer composite formed of at least two elements so as to form a p-n type junction. The composition of the semiconductor material consists of pure silicon or silicon with an additional impurity element for improving the properties of the semiconductor, the additional impurity element being selected from the group consisting of hydrogen, phosphorus, sulfur, oxygen, boron, arsenic, tellurium, tin, selenium, aluminum, gallium, indium, chromium, silver, iron and bismuth. A method of manufacturing a thin ribbon of a two-layer composite of semiconductor material is also disclosed. The flexible thin ribbon of semiconductor is available for use as/or in a semiconductor electronic device.
REFERENCES:
patent: 3341361 (1967-09-01), Gorski
patent: 4077818 (1978-03-01), Chu
patent: 4113532 (1978-09-01), Authier et al.
patent: 4124410 (1978-11-01), Kotval et al.
patent: 4174234 (1979-11-01), Lindmayer
The American Heritage Dictionary, 2nd College Edition, 1982, p. 368.
Arai Ken-ichi
Tsuya Noboru
Crane Sara W.
Edlow Martin H.
Tsuya Noboru
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