Thin planar semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Housing or package filled with solid or liquid electrically...

Reexamination Certificate

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Details

C257S685000, C257S686000, C257S690000, C257S737000, C257S738000, C257S778000, C257SE23023, C257SE25006

Reexamination Certificate

active

07622801

ABSTRACT:
A thin, planar semiconductor device having electrodes on both surfaces is disclosed. This semiconductor device is provided with an IC chip and a wiring layer having one side that is electrically connected to surface electrodes of the IC chip. On this surface of the wiring layer, conductive posts are provided on wiring of the wiring layer, and an insulating resin covers all portions not occupied by the IC chip and conductive posts. The end surfaces of the conductive posts are exposed from the insulating resin and are used as first planar electrodes. In addition, a resist layer is formed on the opposite surface of the wiring layer. Exposed portions are formed in the resist layer to expose desired wiring portions of the wiring layer. These exposed portions are used as second planar electrodes. Stacking semiconductor devices of this construction enables an improvement in the integration of semiconductor integrated circuits.

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Japanese Office Action dated Sep. 13, 2006, from corresponding Japanese Application 2002-086422.

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