Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-04-08
2008-04-08
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
Reexamination Certificate
active
07354862
ABSTRACT:
Embodiments of the invention include a device with stacked substrates. Conducting interconnecting structures of one substrate are bonded to conducting interconnecting structures of another substrate. A passivating layer may be on the conducting interconnecting structures between the substrates and may be formed by an atomic layer deposition process or a with a Langmuir-Blodgett technique.
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Foley Lawrence
Kloster Grant
Wong Lawrence
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Lebentritt Michael
Stevenson Andre′
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