Thin P-type gallium nitride and aluminum gallium nitride...

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction

Reexamination Certificate

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C257S014000, C257S094000, C257S103000, C257SE33034, C438S047000

Reexamination Certificate

active

08044383

ABSTRACT:
A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.

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