1975-08-08
1976-12-28
Edlow, Martin H.
357 6, 357 52, 357 23, H01L 2714
Patent
active
040005054
ABSTRACT:
A semiconductor device comprising a first layer of semiconductor material ving a bulk region of p-type conductivity and an inversion surface of n-type conductivity which forms a p-n junction with said bulk region, a covering layer on said inversion surface of oxides of silicon in a thickness of about 20-50 angstroms, and metallic contacts placed over said oxide layer.
REFERENCES:
patent: 3493767 (1970-03-01), Cohen
patent: 3911465 (1975-10-01), Foss
Epstein Arnold S.
Share Stewart
Edelberg Nathan
Edlow Martin H.
Elbaum Saul
Gibson Robert P.
The United States of America as represented by the Secretary of
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