Thin oxide fuse

Details Thin oxide fuse Thin oxide fuse

1986-04-07

1988-07-12

Envall, Jr., Roy N.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific current responsive fault sensor

357 51, 361 58, 361 91, H01L 2978

Patent

active

047573597

ABSTRACT:
An oxide fuse, and method of forming same, formed by a thin layer of oxide dielectric between a lower electrode substrate and an upper electrode. A fuse-programming bias of approximately 15V causes Fowler-Nordheim tunneling at low temperature to damage the dielectric layer, and shorts the upper and lower electrodes together. The oxide layer is advantageously formed simultaneously with the gate oxide layer in an EEPROM.

REFERENCES:
patent: 4502208 (1985-03-01), McPherson
patent: 4503519 (1985-03-01), Arakawa
patent: 4507757 (1985-03-01), McElroy
patent: 4546454 (1985-10-01), Gupta et al.
patent: 4608585 (1986-08-01), Keshtbod
Sato et al., A New Programmable Cell Utilizing Insulator Breakdown, IEDM 85, pp. 639-642.

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