Thin-oxide devices for high voltage I/O drivers

Details Thin-oxide devices for high voltage I/O drivers Thin-oxide devices for high voltage I/O drivers

2006-05-16

2006-05-16

Ton, My-Trang Nu (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Amplitude control

C327S112000

Reexamination Certificate

active

07046067

ABSTRACT:
An I/O driver includes a pull-down module and pull-up module. The pull-down module has one or more NMOS transistors serially coupled between ground and an output node. The pull-up module has one or more PMOS transistors serially coupled between a first voltage and the output node. The gates of the PMOS and NMOS transistors are controlled by a set of differential biases for selectively pulling the output node to the first voltage or ground. The differential biases are separately set for each of the transistors so that a voltage difference across each of the transistors does not exceed a predetermined value, thereby preventing the same from damage.

REFERENCES:
patent: 6031394 (2000-02-01), Cranford et al.
patent: 6054888 (2000-04-01), Maley
patent: 6429716 (2002-08-01), Drapkin et al.
patent: 6628149 (2003-09-01), Ajit
patent: 6801064 (2004-10-01), Hunt et al.

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