Thin line junction photodiode

Details Thin line junction photodiode Thin line junction photodiode

1985-11-22

1988-01-05

Davie, James W.

357 16, 357 20, 357 68, H01L 2714

Patent

active

047179465

ABSTRACT:
Photodiode structure and method of manufacturing the same, wherein the photodiode has a combination of very high shunt resistance and exceptionally low capacitance with only a slight loss in sensitivity. The diode junction is formed by a narrow line, and the geometry of the device can take many forms. The device has a typical shunt resistance of 150 megohms and a typical capacitance of 80 picofarads for an equivalent photosensitive area of 1 cm.sup.2, which cannot be achieved by current standard technology.

REFERENCES:
patent: 3733527 (1973-05-01), Migitaka et al.
patent: 3959646 (1976-05-01), de Cremous
patent: 4077819 (1978-03-01), Hutson
patent: 4091409 (1978-05-01), Wheatley, Jr.

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