Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-03-21
2006-03-21
Kunemund, Robert (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S090000, C117S094000, C117S095000
Reexamination Certificate
active
07014709
ABSTRACT:
A CVD method deposits conformal metal layers on small features of a substrate surface. The method includes three principal operations: depositing a thin conformal layer of precursor over some or all of the substrate surface; oxidizing the precursor to convert it to a conformal layer of metal oxide; and reducing some or all of the metal oxide to convert it to a conformal layer of the metal itself. The conformal layer of precursor may form a “monolayer” on the substrate surface. Examples of metals for deposition include copper, cobalt, ruthenium, indium, and rhodium.
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Beyer Weaver & Thomas LLP
Kunemund Robert
Novellus Systems Inc.
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