Thin INP spacer layer in a high speed laser for reduced...

Details Thin INP spacer layer in a high speed laser for reduced... Thin INP spacer layer in a high speed laser for reduced...

2007-05-15

2009-10-20

Nguyen, Dung T (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010, C372S046010

Reexamination Certificate

active

07606279

ABSTRACT:
Embodiments disclosed herein relate to high-speed lasers such as FP and DFB lasers. In one embodiment, the high speed laser comprises a substrate, an active region positioned above the substrate, a mesa positioned above the active region, and one or more layers disposed between the active region and the mesa, wherein the thickness of at least one of the one or more layers is implemented to at least partially minimize the distance between the mesa and active region such that lateral current spreading between the mesa and the active region is at least partially minimized.

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