Thin GaAs solar cell structures

Details Thin GaAs solar cell structures Thin GaAs solar cell structures

1986-10-09

1987-09-08

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

357 30, H01L 3106

Patent

active

046925597

ABSTRACT:
A process for fabricating layered semiconductor structures, particularly thin gallium arsenide solar cells, on reusable substrates. The structure is fabricated by depositing a selectively removable layer such as gallium aluminum arsenide onto a substrate, and then depositing a solar cell basic structure on the selectively removable layer. Preferably, the solar cell basic structure includes a layer of p-type gallium arsenide on the layer of gallium aluminum arsenide, a layer of n-type gallium arsenide on the p-type gallium arsenide, and a transparent glass cover over the n-type gallium arsenide layer. The solar cell basic structure is separated from the substrate by selectively dissolving the gallium aluminum arsenide layer, and a new layer of gallium aluminum arsenide is epitaxially deposited upon the exposed face to form a thin, lightweight gallium arsenide solar cell. If the layer of p-type gallium arsenide is about 0.5 microns thick or less, the new layer of gallium aluminum arsenide may be omitted. The separated substrate can then be reused.

REFERENCES:
patent: 4227941 (1980-10-01), Bozler et al.
patent: 4255208 (1981-03-01), Deutscher et al.
Proceedings of the 15th IEEE Photovoltaic Specialists Conference, 12-15, May 1981, Kissimmee, Florida (US) J. C. C. Fan et al, "Thin Film GaAs Solar Cells", pp. 666-672.
JEE, Journal of Electronic Engineering, vol. 19, No. 186, Jun. 1982 (Tokyo, JP) Y. Yukimoto: "Research Advances for GaAs Solar Cells", pp. 39-42.
NASA Tech Briefs, Summer 1980, p. 135.
J. C. C. Fan et al, Conf. Record, 15th IEEE Photovoltaic Specialists Conf. (1981), pp. 666-672.
C. O. Bozler et al, Appl. Phys. Lett., vol. 31, pp. 629-631 (1977).
A. M. Barnett et al, Conf. Record, 17th IEEE Photovoltaic Specialists Conf. (1984), pp. 50-55.

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