Thin GaAs die with copper back-metal structure

Details Thin GaAs die with copper back-metal structure Thin GaAs die with copper back-metal structure

2005-03-22

2005-03-22

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

C257S669000, C257S675000, C257S762000, C257S782000, C257S473000, C257S763000, C257S784000, C257S786000, C257S758000, C257S700000, C257S701000

Reexamination Certificate

active

06870243

ABSTRACT:
A thin GaAs Substrate can be provided with a copper back-metal layer to allow the GaAs Substrate to be packaged using conventional plastic packaging technologies. By providing the GaAs Substrate with a copper back-metal layer, the GaAs Substrate can be made thinner than 2 mils (about 50 microns), thereby reducing heat dissipation problems and allowing the semiconductor die to be compatible with soft-solder technologies. By enabling the semiconductor die to be packaged in a plastic package substantial cost savings can be achieved.

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T. Grebs et al., “The Use of Copper Based Backmetal Schemes as a Low Stress and Low Thermal Resistance Alternative for Use in Thin Substrate Power Devices,” Electrochemical Society Proceedings vol. 99-9, New York, NY, pp. 185-193, May 3, 1999.
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