Thin film vacuum evaporation device

Details Thin film vacuum evaporation device Thin film vacuum evaporation device

1990-04-24

1992-03-24

Beck, Shrive

Coating apparatus

Gas or vapor deposition

118620, 118722, 118726, 20429802, 427 42, 427 531, C23C 1600

Patent

active

050977938

ABSTRACT:
A thin film vacuum evaporation device having a reaction gas supplier for locally supplying a reaction gas to the evaporating point on a target. The device includes a reaction chamber that can be kept under vacuum with a light transmitting window disposed therein allowing the passage of a laser beam on the target. Also, a differential pressure chamber may be provided between the target and the light transmitting window, and a gas introducing section may be connected to the differential pressure chamber. Thus, the vapor generated by the target is prevented from adhering to the light transmitting window, and the light transmitting window can be kept clean.

REFERENCES:
patent: 4726320 (1988-02-01), Ichikawa
patent: 4966887 (1990-10-01), Garvey
Takeshi Morita et al, "Ceramic Vapor Deposition on Aluminum Ally with CO.sub.2 Laser", May, 1987, pp. 497-503.
D. Bauerle, "Laser-Induced Formation and Surface Processing of High-Temperature Superconductors", Feb. 20, 1989, pp. 527-541.
A. Inam et al, "As-deposited high T.sub.c and J.sub.c superconducting thin films made at low temperatures", Jul. 11, 1988, pp. 908-910.

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