Thin film transistors of a thin film transistor liquid...

Details Thin film transistors of a thin film transistor liquid... Thin film transistors of a thin film transistor liquid...

2006-01-17

2006-01-17

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

With shielding

C257S411000, C257S059000, C257S072000

Reexamination Certificate

active

06987311

ABSTRACT:
A method for fabricating thin film transistors (TFT) of a TFT-LCD. The method first forms a gate electrode of the TFT in a transistor area of a substrate. Then a first dielectric layer, a light shielding layer, a second dielectric layer, a semiconductor layer, a doped silicon conductive layer and a second metal layer are sequentially formed on the gate electrode so as to form the TFT in the transistor area. A channel area is defined in the TFT for separating the second metal layer and the doped silicon conductive layer so as to respectively form a source electrode and a drain electrode of the TFT. Finally, a passivation layer and a transparent conductive layer are sequentially formed on the drain electrode, and the transparent conductive layer is connected with the drain electrode through a first via hole of the passivation layer.

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