Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-12-11
2007-12-11
Sefer, A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S064000, C257S065000, C257S066000, C257S627000, C257S628000, C257SE21413, C257SE27111, C257SE29137, C257SE29151, C257SE29279
Reexamination Certificate
active
10727651
ABSTRACT:
The TFT has a channel-forming region formed of a crystalline semiconductor film obtained by heat-treating and crystallizing an amorphous semiconductor film containing silicon as a main component and germanium in an amount of not smaller than 0.1 atomic % but not larger than 10 atomic % while adding a metal element thereto, wherein not smaller than 20% of the lattice plane {101} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, not larger than 3% of the lattice plane {001} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film, and not larger than 5% of the lattice plane {111} has an angle of not larger than 10 degrees with respect to the surface of the semiconductor film as detected by the electron backscatter diffraction pattern method.
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Arai Yasuyuki
Asami Taketomi
Kasahara Kenji
Kokubo Chiho
Mitsuki Toru
Sefer A.
Semiconductor Energy Laboratory Co,. Ltd.
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