Thin film transistors and methods of making

Details Thin film transistors and methods of making Thin film transistors and methods of making

1998-12-07

2000-03-28

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

257 49, 257 51, 257 67, 257286, 257401, 257618, 438151, 438158, 438300, 438690, H01L 2972

Patent

active

060435070

ABSTRACT:
A thin film effect transistor includes: a) a thin film channel region; b) a pair of opposing electrically conductive first and second source/drain regions adjacent the thin film channel region; (c) a gate insulator and a gate positioned adjacent the thin film channel region for electrically energizing the channel region to switch on the thin film field effect transistor; (d) the first source/drain region having a first thickness, the second source/drain region having a second thickness, the channel region having a third thickness; at least one of the first and second thicknesses being greater than the third thickness. Methods are disclosed for making thin field effect transistors.

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