Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-02-14
1996-09-10
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 49, 257 66, 257 72, 257347, 257532, H01L 2976
Patent
active
055548610
ABSTRACT:
Thin file transistor including polycrystalline silicon or amorphous silicon thin film channel regions having a thickness of between about 100 .ANG. and 2500 .ANG. which are thinner than at least a portion of the source and drain regions and active matrix assemblies including thin film transistors for improved electro-optical displays are provided.
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Kodaira Toshimoto
Mano Toshihiko
Oshima Hiroyuki
Carroll J.
Seiko Epson Corporation
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