1981-05-26
1983-12-20
Edlow, Martin H.
357 4, 357 91, H01L 2978
Patent
active
044220901
ABSTRACT:
A thin film transistor has a semiconductor layer, an insulating layer and source, drain and gate electrodes. The improvement comprises creating an enhanced conductivity layer in the semiconductor by ion implantation or diffusion on phased deposition. The benefits of the enhanced conductivity layer are that transistor action is obtained without the conventional annealing step and D.C. stability is much improved.
REFERENCES:
patent: 3191061 (1965-06-01), Weimer
patent: 3289054 (1966-11-01), Haering
Shepherd Frank R.
Westwood William D.
Edlow Martin H.
Northern Telecom Limited
Wilkinson Stuart L.
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