Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-09-27
1997-01-28
Tran, Minhloan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257347, 257626, 349 42, H01L 2904
Patent
active
055980120
ABSTRACT:
A thin-film transistor for connecting a signal electrode line to a pixel electrode of a liquid crystal display, the thin-film transistor including: a substrate; a gate electrode formed on the substrate; a gate insulating layer formed on the gate electrode; a semiconductor layer formed on the gate insulating layer; an ohmic contact layer formed on the semiconductor layer; a source electrode formed on the ohmic contact layer over a first end of the semiconductor layer; a drain electrode formed on the ohmic contact layer over a second end of the semiconductor layer such that a channel region is formed; and a protective film formed on the gate insulating layer, the source electrode, the channel region of the semiconductor layer, and the drain electrode. A width of the gate electrode is wider than a width of the semiconductor layer. The pixel electrode is connected to the drain electrode through a first hole in the protective film, and the signal electrode line is connected to the source electrode through a second hole in the protective film.
REFERENCES:
patent: 5005056 (1991-04-01), Motai et al.
patent: 5355002 (1994-10-01), Wu
Bever Patrick T.
Frontec Incorporated
Shoup Guy W.
Tran Minhloan
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