Thin-film transistor with vertical channel region

Details Thin-film transistor with vertical channel region Thin-film transistor with vertical channel region

2007-09-04

2007-09-04

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S302000, C257S328000, C257S347000, C257S263000

Reexamination Certificate

active

11261194

ABSTRACT:
A vertical thin-film transistor (V-TFT) is provided along with a method for forming the V-TFT. The method comprises: providing a substrate made from a material such as Si, quartz, glass, or plastic; conformally depositing an insulating layer overlying the substrate; forming a gate, having sidewalls and a thickness, overlying a substrate insulation layer; forming a gate oxide layer overlying the gate sidewalls, and a gate insulation layer overlying the gate top surface; etching the exposed substrate insulation layer; forming a first source/drain region overlying the gate insulation layer; forming a second source/drain region overlying the substrate insulation layer, adjacent a first gate sidewall; and, forming a channel region overlying the first gate sidewall with a channel length about equal to the thickness of the gate, interposed between the first and second source/drain regions.

REFERENCES:
patent: 4757361 (1988-07-01), Brodsky et al.
patent: 2003/0075758 (2003-04-01), Sundaresan et al.
patent: 0280370 (1988-08-01), None

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