Thin film transistor with vertical channel adjacent sidewall of

Details Thin film transistor with vertical channel adjacent sidewall of Thin film transistor with vertical channel adjacent sidewall of

1997-01-24

1998-03-03

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257347, H01L 2904, H01L 31036, H01L 310376, H01L 3120

Patent

active

057238790

ABSTRACT:
A thin film transistor and a method which forms a channel region (c), a lightly doped drain region (LDD) region and, optionally, an offset region (o), in a portion of a semiconductor layer which is adjacent a sidewall of the gate electrode without the use of photo masks, thereby increasing the permissible degree of miniaturization and improving production yield.

REFERENCES:
patent: 4905066 (1990-02-01), Dohjo et al.
"High Reliability & High Performance .35.mu.m Gate-Inverted TFT's For 164M BIT SRAM Application Using Self-Aligned LDD Structures" C.T. Liu et al., IEDM Digest, Dec. 1992, pp. 823-826.

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