Thin film transistor with tapered electrode structure and manufa

Details Thin film transistor with tapered electrode structure and manufa Thin film transistor with tapered electrode structure and manufa

1997-12-17

2000-10-17

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 72, 257347, 257348, 257349, 257350, 257351, 257352, H01L 2900

Patent

active

061335843

ABSTRACT:
A thin film transistor includes a substrate, a gate electrode, an insulating film, a semiconductor film, a source electrode, a drain electrode, wherein in at least one electrode of the gate electrode, the source electrode and the drain electrode, end portion of the at least one electrode is tapered in such a manner that a thickness decreases in a direction toward end face of the at least one electrode, the at least one electrode being composed of one electrode material, and prescribed physical property of the at least one electrode being changed in a direction perpendicular to a surface of the at least one electrode, so that an etching rate of the at least one electrode is changed in the direction.

REFERENCES:
patent: 5905274 (1999-05-01), Ahn et al.

Affiliated with

Also associated with

Rating

Thin film transistor with tapered electrode structure and manufa does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor with tapered electrode structure and manufa, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor with tapered electrode structure and manufa will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-471582