Thin-film transistor with suppressed off-current and V.sub.th

Details Thin-film transistor with suppressed off-current and V.sub.th Thin-film transistor with suppressed off-current and V.sub.th

1994-02-18

1995-08-08

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257 56, 257 58, 257285, 257347, 257649, H01L 2700, H01L 2978

Patent

active

054401682

ABSTRACT:
A thin-film transistor (3, 5a, 5b and 5c) is covered with a first silicon nitride film (9) formed by an LPCVD method. A first silicon oxide film (6) is formed on the first silicon nitride film (9). A second silicon nitride film (7), i.e., passivation film which is formed by a plasma CVD method is provided on the first silicon oxide film (6). In addition, the thin-film transistor includes a semiconductor layer covering a gate electrode. The semiconductor layer includes source, drain and active regions. The active region preferably includes a smaller amount of fluorine than the gate electrode.

REFERENCES:
patent: 4520380 (1985-05-01), Ovshinsky et al.
"Leakage Current Reduction in Sub-Micron Channel Poly-Si TFT's" by Kitajima et al., Extended Abstracts of . . . , Aug. 27-29, 1991, pp. 174-176.
"The Effect of Flourine in Silicon Dioxide Gate Dielectrics" by Wright et al., IEEE Transaction on Electron Devices, vol. 36, No. 5, May 1989, pp. 879-889.
"Negative Bias Temperature Instability in Poly-Si TFT's" by Maeda et al., 1993 VLSI Symposium, pp. 29-30.
"Water-Related Threshold Voltage Instability of Polysilicon TFT's", Okuyama et al., IEDM 93, pp. 527-530.

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