Thin film transistor with source and drain regions having two se

Details Thin film transistor with source and drain regions having two se Thin film transistor with source and drain regions having two se

1995-03-06

1997-03-11

Gross, Anita Pellman

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

257 57, 349 43, G02F 1136, H01L 2904

Patent

active

056107374

ABSTRACT:
A TFT includes a channel region provided on a substrate and having on the both sides a pair of source region and a drain region formed of an amorphous semiconductor layer, a gate electrode provided above or below the channel region through a gate insulating layer, and wiring electrodes which contact the source region and the drain region directly or indirectly, and wherein a surface portion of the source region and drain region contacting the wiring electrodes directly or indirectly comprises a semiconductor layer containing crystalline structure. By this structure, a thin film transistor can be obtained capable of operating at high speed with high drive capability.

REFERENCES:
patent: 4804605 (1989-02-01), Yoshizawa et al.
patent: 5477578 (1993-01-01), Kakinoki et al.
"17-in.-Diagonal Color TFT-LCDs for Engineering Workstations", Kawai et al. SID 93 Digest, pp. 743-746 (1993).

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