Thin-film transistor with set trap level densities, and...

Details Thin-film transistor with set trap level densities, and... Thin-film transistor with set trap level densities, and...

2006-10-17

2006-10-17

Schechter, Andrew (Department: 2871)

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

C349S059000, C349S110000, C349S111000, C257S610000

Reexamination Certificate

active

07123314

ABSTRACT:
A light shielding film capable of shielding against light entering an active layer of a TFT and electroconductive is formed on the lower layer side of the active layer. Electrical stress is applied by causing a current in an insulating film between source and drain electrodes and the light shielding film to introduce a trap level at a density at least about 5×1012/cm2into a source region and a drain region in a surface portion of the active layer on the light shielding film side.

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