Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-03-07
2006-03-07
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S089000, C257S106000, C349S106000, C349S138000
Reexamination Certificate
active
07009204
ABSTRACT:
A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped region is disposed between the plurality of intrinsic regions. The plurality of intrinsic regions are linked together to form a connection structure via the first doped region, and the two second doped regions are disposed at both ends of the connection structure, respectively. The source and the drain regions are coupled to the two second doped regions disposed at both ends of the connection structure, respectively. The gate electrode is disposed over the plurality of intrinsic regions, such that the periphery of each of the plurality of intrinsic regions and the periphery of a corresponding gate electrode are substantially aligned with each other.
REFERENCES:
patent: 6707067 (2004-03-01), Zhong et al.
Chang Shih-Chang
Hsieh Hsiu-Chun
Huang Chen-Ting
Tsai Yaw-Ming
Wu I-Wei
Madson & Metcalf
Toppoly Optoelectronics Corp.
Tran Mai-Huong
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