Thin film transistor with reduced leakage current

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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257 52, 257 61, 257347, 257352, H01L 2904

Patent

active

057570280

ABSTRACT:
A thin film transistor which can reduce production of leakage current between the source and drain electrodes and a fabricating method therefor, are disclosed. In the thin film transistor, an insulating film is formed on at least a portion of each side, corresponding to the region between the source and drain electrodes, of the peripheral side surface of the intrinsic semiconductor film, so that no metal silicide is formed thereon.

REFERENCES:
patent: 5114869 (1992-05-01), Tanaka et al.
patent: 5371398 (1994-12-01), Nishihara

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