Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-09-25
1998-05-26
Wallace, Valencia Martin
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 52, 257 61, 257347, 257352, H01L 2904
Patent
active
057570280
ABSTRACT:
A thin film transistor which can reduce production of leakage current between the source and drain electrodes and a fabricating method therefor, are disclosed. In the thin film transistor, an insulating film is formed on at least a portion of each side, corresponding to the region between the source and drain electrodes, of the peripheral side surface of the intrinsic semiconductor film, so that no metal silicide is formed thereon.
REFERENCES:
patent: 5114869 (1992-05-01), Tanaka et al.
patent: 5371398 (1994-12-01), Nishihara
Ishii Hiromitsu
Sasaki Kazuhiro
Sasaki Makoto
Wada Yoshitomo
Casio Computer Co. Ltd.
Martin Wallace Valencia
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