Thin film transistor with piezoelectric film

Details Thin film transistor with piezoelectric film Thin film transistor with piezoelectric film

1996-09-11

1999-02-16

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

257364, 257410, 257411, 257415, 257417, H01L 2982

Patent

active

058723722

ABSTRACT:
A thin film transistor is disclosed comprising a piezoelectric film formed on a piezoresistive body of an ultra thin film and a gate electrode formed on the piezoelectric film. Due to the force generated from the piezoelectric film by an electric field generated according to the strength of a voltage applied to the gate electrode, a pressure is applied on the piezoresistive body to vary the resistance of the piezoresistive body. Thus, the quantity of current that flows from a source terminal through the piezoresistive channel to a drain terminal can be controlled. Since the piezoresistive body can be formed on a plane, a thin film transistor with a three-dimensional structure can be manufactured.

REFERENCES:
patent: 3585415 (1971-06-01), Muller
patent: 3903406 (1975-09-01), London
patent: 4480488 (1984-11-01), Read et al.
patent: 4499515 (1985-02-01), Piotrowski et al.
patent: 4665374 (1987-05-01), Fathimulla
patent: 5115292 (1992-05-01), Takebe et al.
patent: 5279162 (1994-01-01), Takebe et al.
patent: 5663507 (1997-09-01), Westervelt et al.

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