Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-10-20
1997-02-04
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 69, 257914, H01L 2976, H01L 2912, H01L 27108
Patent
active
056001541
ABSTRACT:
According to a method of manufacturing a thin film transistor (TFT), amorphous silicon is formed by ion-implanting either silicon or nitrogen into a region of polysilicon while a region located at the sidewall of a gate electrode is selectively left using the stepped portion of the gate electrode. Then, a heat treatment is applied to convert the amorphous silicon into polysilicon with the remaining polysilicon as a seed crystal. As a result, polysilicon having crystal grains of great grain size can be formed in uniform. Thus, the electric characteristics of a TFT can be improved with no difference in the electric characteristics between each TFT.
REFERENCES:
patent: 5266816 (1993-11-01), Seto et al.
Oxidation and MOS Characteristics of Silicon by N.sup.+- Ion-Implantation Process, Kudo et al., SDM89-160, pp. 7-12.
"Nucleation Controlled Poly-Si TFT By Selective Doping," T. Katoh et al., Extended Abstracts of the 1993 Inter. Conference on Solid State Devices and Materials, pp. 428-430.
Polycyrstalline Si Thin-Film Transistors Fabricated at 800.degree. C: Effects of Grain Size and {110} Fiber Texture, K. T. Y. Kung et al., J. Appl. Phys. 62 (4), 15 Aug. 1987, pp. 1503-1509.
Influence of .sup.16 O, .sup.12 C, .sup.14 N, and Noble Gases on the Crystallization of Amorphous Si Layers, E. F. Kennedy et al., Journal of Applied Physics, vol. 48, No. 10, Oct. 1977, pp. 4241-4246.
Novel NICE (Nitrogen Implantation into CMOS Gate Electrode and Source-Drain) Structure For High Reliability and High Performance 0.25 .mu.m Dual Gate CMOS, T. Kuroi et al., IEDM 93, pp. 325-328.
Ipposhi Takashi
Maeda Shigenobu
Shimizu Satoshi
Ueno Shuichi
Fahmy Wael
Mitsubishi Denki & Kabushiki Kaisha
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