Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-04-17
2007-04-17
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C072S432000, C072S370060, C072S370060, C438S029000, C438S030000
Reexamination Certificate
active
11189903
ABSTRACT:
A thin film transistor with a microlens. A metal gate is formed on a substrate. A gate dielectric covers the metal gate. A semiconductor layer is formed on the gate dielectric. Source/drain metal layers respectively overlap ends of the top surface of the semiconductor layer such that the semiconductor layer between the source/drain metal layers is exposed. The microlens is formed on the exposed top surface of the semiconductor layer.
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China Office Action mailed Nov. 10, 2006.
AU Optronics Corp.
Mandala Jr. Victor A.
Pert Evan
Thomas Kayden Horstemeyer & Risley
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