Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2007-07-24
2007-07-24
Tran, Minh-Loan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S066000, C257SE29003
Reexamination Certificate
active
11017673
ABSTRACT:
A thin film transistor includes a substrate, a semiconductor layer pattern on the substrate, a gate insulating layer on the semiconductor layer pattern, and a gate electrode on a gate insulating layer. Low angle grain boundaries of polysilicon formed in a channel layer in the semiconductor layer pattern are tilted −15 to 15° with respect to a current flowing direction.
REFERENCES:
patent: 6602765 (2003-08-01), Jiroku et al.
patent: 6916690 (2005-07-01), Chang
patent: 6939754 (2005-09-01), Moriguchi et al.
patent: 2003/0193069 (2003-10-01), Park et al.
patent: 07-226374 (1995-08-01), None
patent: 08-097137 (1996-04-01), None
patent: 10-214974 (1998-08-01), None
patent: 11-097352 (1999-04-01), None
patent: 2001-326176 (2001-11-01), None
patent: 10-2003-0060403 (2003-07-01), None
Lee Ki-Yong
Park Byoung-Keon
Seo Jin-Wook
Yang Tae-Hoon
H. C. Park & Associates, PLC
Samsung SDI & Co., Ltd.
Tran Minh-Loan
LandOfFree
Thin film transistor with low angle grain boundaries in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor with low angle grain boundaries in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor with low angle grain boundaries in a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3811179