Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-12-27
1998-06-30
Monin, Donald
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257352, 257435, H01L 2701
Patent
active
057738483
ABSTRACT:
A self-aligned polysilicon thin film transistor, and a method for manufacturing it, is described. An insulating substrate is provided. A gate electrode is formed on the insulating substrate. A protective light-absorbing layer is formed over the gate electrode and over the insulating substrate. The protective light-absorbing layer is patterned. A gate dielectric layer is formed over the protective light-absorbing layer and over the insulating substrate. A layer of amorphous silicon is formed over the gate dielectric layer. A photoresist mask is formed over the layer of amorphous silicon, aligned with the protective light-absorbing layer. The amorphous silicon layer is implanted with a conductivity-imparting dopant in source/drain regions not protected by the photoresist mask. The photoresist mask is removed. The amorphous silicon layer is laser-annealed, whereby doped polysilicon is formed in the source/drain regions, and undoped polysilicon is formed in areas between the source/drain regions. Source and drain electrodes of electrically conductive material are formed in contact with the source/drain regions.
REFERENCES:
patent: 4767723 (1988-08-01), Hinsburg, III et al.
patent: 5036370 (1991-07-01), Miyago et al.
patent: 5371398 (1994-12-01), Nishihara
Weng Tzung-Szu
Wu Meng-Yueh
Ackerman Stephen B.
Industrial Technology Research Institute
Monin Donald
Saile George O.
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