Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-01-10
2006-01-10
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S061000
Reexamination Certificate
active
06984848
ABSTRACT:
A buffer layer for promoting electron mobility. The buffer layer comprises amorphous silicon layer (a-Si) and an oxide-containing layer. The a-Si has high enough density that the particles in the substrate are prevented by the a-Si buffer layer from diffusing into the active layer. As well, the buffer, having thermal conductivity, provides a good path for thermal diffusion during the amorphous active layer's recrystallization by excimer laser annealing (ELA). Thus, the uniformity of the grain size of the crystallized silicon is improved, and electron mobility of the TFT is enhanced.
REFERENCES:
patent: 6455874 (2002-09-01), Park et al.
patent: 2003/0148567 (2003-08-01), Joo et al.
Liao Long-Sheng
Lin Kun-Chih
Peng Chia-Tien
AU Optronics Corp.
Ladas & Parry LLP
Nelms David
Nguyen Thinh T
LandOfFree
Thin film transistor with buffer layer for promoting... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor with buffer layer for promoting..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor with buffer layer for promoting... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3527502