Thin film transistor with asymmetrically arranged gate electrode

Details Thin film transistor with asymmetrically arranged gate electrode Thin film transistor with asymmetrically arranged gate electrode

1997-07-11

1999-07-20

Martin- Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257510, H01L 2976, H01L 31036

Patent

active

059258942

ABSTRACT:
A thin film transistor which includes an oxide layer containing a trench; a semiconductor layer formed on the oxide layer, including the trench; a buffer layer formed on the semiconductor layer in the trench; a gate electrode on the semiconductor layer and asymmetrically arranged relative to the trench; and an impurity region formed in the semiconductor layer adjacent the gate electrode on one side of the trench, and an impurity region also formed in the semiconductor layer on the other side of the trench.

REFERENCES:
patent: 5235189 (1993-08-01), Hayden et al.
patent: 5508531 (1996-04-01), Ha
patent: 5539238 (1996-07-01), Malhi
patent: 5567958 (1996-10-01), Orlowski et al.
patent: 5773871 (1998-06-01), Boyd et al.
patent: 5869847 (1999-02-01), Sin et al.

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